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| do-4 1 plastic-encapsulate diodes 1 h igh diode semiconductor do-4 1 db3 silicon bidirectional diac vbo 28v-36v features symbols parameters value units pc power disspation on printed circuit(l=10mm) ta=50 150 mw itrm repetitive peak on-state current tp=10us f=100hz tstg/tj storage and operating junction temperature -40 to+125 symbols parameters test condition value units vbo break voltage(note 2) c=22nf(note2) see diagram1 v i+vboi- i-vboi breakover voltage symmetry c=22nf(note2) see diagram1 i vi dynamic breakover voltage(note1) i=(ibo to if=10ma) see diagram1 vo output voltage (note1) see diagram2 min 5 v ibo breakover current (note1) c=22nf(note2) max 100 ua tr rise time(note1) see diagram3 typ 1.5 us ib leakage current(note1) vb=0.5 vbo max see diagram1 max 10 ua 2.0 a min 28 typ 32 max 36 max v 3 min 5 v electrical characteristics (t a =25 unless otherwise specified
7 \ s l f d o & k d u d f w h u l v w l f v 2 igh diode semiconductor ? ? ? 3 h igh diode semiconductor do-4 1 1.0(25.4) min .205(5.21) .166(4.22) .034(0.86) .028(0.71) dia .107(2.72) .080(2.03) 1.0(25.4) min unit: in inches (millimeters) dia h igh diode semiconductor ammo box packaging specifications for axial lead rectifiers |
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